METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To seal micropipe defects present in a silicon carbide single crystal in the inside of the silicon carbide single crystal. SOLUTION: A silicon carbide crystal substrate 1 having micropipe defects 6 is prepared. Coating materials 5 are arranged so as to be brought into contact with both the sides of the silicon carbide crystal substrate 1. Then the silicon carbide crystal substrate 1 on which the coating materials 5 are arranged is heat-treated under pressure and the silicon carbide crystal substrate 1 is integrated with the coating materials 5. Then the silicon carbide crystal substrate 1 integrated with the coating materials 5 is heat-treated to seal the micropipe defects 6 present in the silicon carbide crystal substrate 1 in the inside of the silicon carbide crystal substrate 1. Since the micropipe defects formed in the silicon carbide crystal substrate 1 can be packed with the coating materials 5 without gaps by the heat treatment under pressure, the micropipe defects 6 can be effectively sealed by a micropipe defect sealing process.