发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus wherein treatment liquid can be suitable used again and the amount of exhaust gas can be reduced. SOLUTION: A wafer cleaning device 5 cleaning a wafer W comprises a supply nozzle 34 supplying AMP and pure water, a spin chuck 31 holding the wafer W, and a vessel 30 accommodating the spin chuck 31. The vessel 30 comprises an inner treatment chamber 42 and an outer treatment chamber 43 and is constituted so as to be freely elevated to the spin chuck 31. A first exhausting circuit 50 exhausting AMP and atmosphere in the chamber is connected with the inner treatment chamber 42, a second exhausting circuit 51 exhausting pure water and atmosphere in the chamber is connected with the outer treatment chamber 43, and AMP is supplied from the supply nozzle 34 to the surface of the wafer W again.
申请公布号 JP2001160546(A) 申请公布日期 2001.06.12
申请号 JP19990343780 申请日期 1999.12.02
申请人 TOKYO ELECTRON LTD 发明人 NAKAMORI MITSUNORI;TANIYAMA HIROMI;MIYAZAKI TAKANORI
分类号 B08B3/02;H01L21/00;H01L21/02;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 主分类号 B08B3/02
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