Thin film transistor and manufacturing method thereof

摘要

A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.

主权项

1. A thin film transistor, comprising:
a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a first source layer and a first drain layer,
wherein the entire first drain layer forms a first coplanar layer with the first semiconductor layer and does not overlap with the first semiconductor layer,wherein the first drain layer a same thickness as the first semiconductor layer, andwherein the first source layer and the first drain layer are at both sides of the first semiconductor layer; a second source layer and a second drain layer,
wherein the entire second drain layer forms a second coplanar layer with the second semiconductor layer and does not overlap with the second semiconductor layer,wherein the second drain layer has a same thickness as the second semiconductor layer,wherein the second source layer and the second drain layer are at both sides of the second semiconductor layer, andwherein only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer; and a gate insulating layer directly formed on the second coplanar layer.