Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure

摘要

A method of manufacturing a split gate flash memory cell is provided. A select gate is formed on a semiconductor substrate. A sacrificial spacer is formed laterally adjacent to the select gate and on a first side of the select gate. A charge trapping layer is formed lining upper surfaces of the select gate and the sacrificial spacer, and further lining a sidewall surface of the select gate on a second side of the select gate that is opposite the first side of the select gate. A memory gate is formed over the charge trapping layer and on the second side of the select gate. The sacrificial spacer is removed. The resulting semiconductor structure is also provided.

主权项

1. A method of manufacturing a split gate flash memory cell, said method comprising:
forming a select gate on a semiconductor substrate; forming a sacrificial spacer laterally adjacent to the select gate and on a first side of the select gate; forming a charge trapping layer lining upper surfaces of the select gate and the sacrificial spacer, and further lining a sidewall surface of the select gate on a second side of the select gate that is opposite the first side of the select gate; forming a memory gate over the charge trapping layer and on the second side of the select gate; and removing the sacrificial spacer.