Stress relieving semiconductor layer

摘要

A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

主权项

1. A device comprising:
an active region; a p-type contact layer located on a first side of the active region; and a n-type contact layer located on a second side of the active region opposite the first side, wherein the n-type contact layer is located between the active region and a semiconductor structure comprising:
a cavity containing layer, wherein the cavity containing layer is formed of a semiconductor material, has a thickness greater than two monolayers, and has a plurality of cavities, and wherein the plurality of cavities have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.