| 摘要 |
PURPOSE: A fabrication method of thin film transistor is provided to simplify manufacturing processes by forming a gate electrode using a chromium silicide layer. CONSTITUTION: A buffer oxide(10) is formed on a substrate(100) to prevent a dopant diffusion. An active layer(20) is formed by depositing and patterning a polycrystalline silicon on the buffer oxide(10). A gate insulation layer(30) is deposited on the entire surface of the resultant structure. A chromium silicide layer(40'') is formed by annealing an amorphous silicon and a chromium at the temperature of 250 deg.C or lower. After forming a photo-etching mask by sequentially depositing, exposing and developing a photoresist, a gate electrode is formed by patterning the chromium silicide layer(40''). Source/drain electrodes are formed by implanting doped dopants on the active layer(20) using the gate electrode as a mask.
|
