| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor, allowing the manufacturing process to be reduced to lower the contact resistance between layers. SOLUTION: In the method of manufacturing a thin film transistor, a thin film having a three-layer (first metal layer 38/ITO layer 40/second metal layer 42) structure is used simultaneously as a source electrode, a drain electrode and a pixel electrode to thereby omit the via forming step and the patterning for forming the pixel electrodes. Data lines 44 are formed by electroplating on the second metal layer 42 of the source electrode.
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