发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that as wiring or the like are physically processed after manufacturing in memory-repair technology of a fuse system in which a defective part of a memory cell section is replaced by a redundant part by physically separating a fuse, the cost is increased, and further, the manufacturing cost owing to a test itself of an incorporated large scale memory is increased. SOLUTION: This device is provided with a memory cell means having a normal port in which normal read/write operation is performed and a test port for test only, a data latch means for temporarily holding write-data written in the memory cell means from a normal port, a comparing means for reading out data written by the normal port in the memory cell means from the test port and comparing read-data with write-data held in the data latch means, a redundant means for holding write-data instead of the memory cell means, and an address holding means for holding information about an address indicating a place of the memory cell means in which write-data is written when noncoincidence occurs in coincidence-comparison by the comparing means.
申请公布号 JP2001307497(A) 申请公布日期 2001.11.02
申请号 JP20000261307 申请日期 2000.08.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 HASHIZUME TAKESHI
分类号 G11C29/04;G11C29/00;G11C29/34;(IPC1-7):G11C29/00 主分类号 G11C29/04
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