METHOD FOR MANUFACTURING PREMETAL DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a premetal dielectric layer of a semiconductor device is provided to improve a threshold voltage and to prevent a leakage current of a PMOS by preventing out-diffusion of boron ions into a silicon wafer. CONSTITUTION: An MOS transistor(13) having a source(S), a drain(D) and a gate(G) is formed on a silicon wafer(11). A liner nitride layer(15) is deposited on the resultant structure by PECVD(plasma enhanced CVD). Plasma treatment is then performed to the surface of the liner nitride layer(15) by using an O2 RTP(rapid thermal processing), thereby removing hydrogen existed in the liner nitride layer(15). Then, a BPSG(boro-phosphor silicate glass) layer(16) as a premetal dielectric layer is deposited on the liner nitride layer(15).