| 摘要 |
A flash memory is provided on a semiconductor substrate. A trench with corners is provided on a surface of the semiconductor substrate. A gate insulation film is provided on a surface within the trench. A floating gate is buried within the trench through the gate insulation film. A control gate is provided isolated from the floating gate, and also is characterized in that at the corners of the trench, corners of the floating gate face through the gate insulation film to edges of the semiconductor substrate, and if the control gate is made low potential whilst the semiconductor substrate is made high potential, then electrons are extracted from the corners of the floating gate.
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