发明名称 |
Active matrix assembly with light blocking layer over channel region |
摘要 |
Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.
|
申请公布号 |
US6316790(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US19970859494 |
申请日期 |
1997.05.20 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KODAIRA TOSHIMOTO;OSHIMA HIROYUKI;MANO TOSHIHIKO |
分类号 |
G02F1/1335;G02F1/1362;G02F1/1368;H01L23/532;H01L23/538;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L29/41 |
主分类号 |
G02F1/1335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|