发明名称 |
Antifuse development using alpha-C:H,N,F thin films |
摘要 |
The present application discloses a method of forming and operating a metal-to-metal antifuse with an amorphous carbon dielectric which provides a very high resistance off state and can be programmed at voltages compatible with deep submicron devices. Furthermore, the programmed filament achieves low resistance with low programming current while maintaining a high level of stability.
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申请公布号 |
US6316346(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US20000654868 |
申请日期 |
2000.09.05 |
申请人 |
GANGOPADHYAY SHUBHRA |
发明人 |
GANGOPADHYAY SHUBHRA |
分类号 |
H01L23/525;(IPC1-7):H01L21/82;H01L21/326;H01L21/479;H01L21/44 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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