发明名称 |
High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor |
摘要 |
A high voltage integrated circuit is provided that includes a first region of first conductivity type; a second region of second conductivity type formed in a first major surface of the first region; a third region of first conductivity type formed in a selected area of a surface of the second region; first source region and first drain region of the first conductivity type formed in the second region, apart from the third region; a first gate electrode formed on a surface of the second region between the first source region and first drain region, through an insulating film; second source region and second drain region of second conductivity type formed in a surface of the third region; and a second gate electrode formed on a surface of the third region between the second source region and the second drain region, through an insulating film.
|
申请公布号 |
US6323539(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US20000639738 |
申请日期 |
2000.08.16 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
FUJIHIRA TATSUHIKO;YANO YUKIO;OBINATA SHIGEYUKI;KUMAGAI NAOKI |
分类号 |
H01L27/06;H01L27/092;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/78;H01L33/00 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|