Nano Wire Structure and Method for Fabricating the Same

摘要

A method comprises applying a first patterning process to a first photoresist layer to form a first opening, a second opening, a third opening and a fourth opening in the sacrificial layer, applying a second patterning process to a second photoresist layer to form a fifth opening, a sixth opening, a seventh opening and an eighth opening in the sacrificial layer, wherein distances between two adjacent openings formed from the first and second patterning processes are substantially equal to each other, applying a third patterning process to a third photoresist layer to form a ninth opening, a tenth opening, an eleventh opening and a twelfth opening in the sacrificial layer, wherein distances between two adjacent openings formed from the second and third patterning processes are substantially equal to each other and forming a plurality of nanowires based on the openings.

主权项

1. A method comprising:
depositing a sacrificial layer on a first dielectric layer over a substrate; applying a first patterning process to a first photoresist layer over the sacrificial layer to form a first opening, a second opening, a third opening and a fourth opening in the sacrificial layer; applying a second patterning process to a second photoresist layer over the sacrificial layer to form a fifth opening, a sixth opening, a seventh opening and an eighth opening in the sacrificial layer, wherein a distance between the fifth opening and the first opening is substantially equal to a distance between the second opening and the sixth opening; applying a third patterning process to a third photoresist layer over the sacrificial layer to form a ninth opening, a tenth opening, an eleventh opening and a twelfth opening in the sacrificial layer, wherein a distance between the ninth opening and the fifth opening is substantially equal to a distance between the tenth opening and the sixth opening; applying a fourth patterning process to a fourth photoresist layer over the sacrificial layer to form a thirteenth opening, a fourteenth opening, a fifteenth opening and a sixteenth opening in the sacrificial layer, wherein a distance between the ninth opening and the thirteen opening is substantially equal to a distance between the tenth opening and the fourteenth opening; and forming nanowires based on the sixteen openings, wherein the sixteen openings in the sacrificial layer are arranged in rows and columns.