| 摘要 |
PROBLEM TO BE SOLVED: To supply a power MOSFET semiconductor device of high withstand voltage and low resistance at a low cost and with a short manufacturing turn-around time. SOLUTION: The device is manufactured by a method for obtaining a structure for forming a trench inside a drift region and forming a body diffusion layer in a sidewall and a bottom part of the trench (diffusion after trench formation) in a planar type power MOSFET. Deep body diffusion formation is effective for high withstand voltage and low resistance. However, for attaining the structure in a usual method, epitaxial growth and deep body region selective formation should be repeated a plurality of times, thus raising a manufacturing cost and prolonging a manufacturing period caused by an increase of manufacturing process. According to this structure, equal effect can be produced much easily.
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