| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent fluctuations of the potential of adjacent circuit regions caused by a surge voltage and can hold normal operation of an inner circuit, etc., with an improved reliability. SOLUTION: Regions 7 and 9 having an MOSFET 8 and an LDMOS 10 formed therein are provided in an n-type silicon layer 2 of an SOI substrate 1. A shield region 11 including a drain 10A of the LDMOS 10 and p-type regions 12 and 13 is provided in the region 9, the p-type region 13 of the shield region 11 is connected to a grounding terminal V0, and an output terminal is connected to the drain 10A of the LDMOS 10. As a result, a high-pass filter is formed between the output and a p-type supporting substrate 3 to enable removal of a surge voltage.
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