发明名称 CLEANING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A cleaning method for manufacturing a semiconductor device is provided to optimize cleaning of a wafer and to minimize a process defect caused by particles, by spraying gas through a groove installed between slots of a hood while the wafer stands by inside the hood. CONSTITUTION: Process gas is sprayed through a groove(50) formed between slots(40) of a hood(30) to prevent influence by the increase of cleaning liquid while a wafer stands by in the hood, so that portions(35,37) above and under the wafer in the hood are filled with the process gas. Mixture gas is sprayed at a position above the hood in a dry process in which the wafer is transferred from a process bath to the hood.
申请公布号 KR20020000267(A) 申请公布日期 2002.01.05
申请号 KR20000034425 申请日期 2000.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, CHUN U
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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