| 摘要 |
PURPOSE: To provide the manufacturing method, of a semiconductor element, which can form a high-quality p-type layer by increasing the electric activation rate of Mg impurities in a GaN-based compound semiconductor layer and which realizes a high-performance and short-wavelength semiconductor laser or the like. CONSTITUTION: In a method which enables manufacture of a semiconductor element by laminating a compound semiconductor layer on a substrate, Mg doped an AlN cap layer 17 is formed on Mg doped GaN-based compound semiconductor layers 15, 16, a heat treatment is then executed to the GaN-based compound semiconductor layers 15, 16, and the AlN cap layer 17 is then removed. |
