| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing bismuth tertiary amyloxide used as a raw material for producing a strong dielectric substance of bismuth oxide- containing SrBi2Ta2O9, etc., and an oxide super electric conductive thin film such as Bi2Sr2CaCu2O8, etc., by a CVD method or a sol-gel method. SOLUTION: This method for producing bismuth tertiary amyloxide is provided by reacting bismuth bromide with sodium tertiary amyloxide or potassium tertiary amyloxide in toluene containing 5-30 wt.% tetrahydrofuran and recovering bismuth tertiary amyloxide by a reduced pressure distillation after separating byproducts of sodium bromide or potassium bromide by filtration.
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