发明名称 METHOD FOR FORMING RESIST PATTERN AND RADIATION-SENSITIVE RESIN COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern and a radiation-sensitive resin composition, by which shrinkage of a resist film in PEB (post exposure baking) can be suppressed while enhancing an optical contrast by using a developing solution containing an organic solvent, and LWR (line width roughness), resolution, rectangularity of a cross-sectional shape and focal depth can be improved.SOLUTION: The method for forming a resist pattern includes: a step of forming a resist film from a radiation-sensitive resin composition; a step of exposing the resist film; and a step of developing the exposed resist film with a developing solution containing an organic solvent. The radiation-sensitive resin composition comprises a polymer the solubility of which in the developing solution decreases by an action of an acid, a radiation-sensitive acid generator, and a solvent. The polymer has a structural unit including a first group, in which the first group includes an adamantane ring substituted with a substituent represented by formula (1) below. In formula (1), Rrepresents a monovalent or divalent organic group.SELECTED DRAWING: None
申请公布号 JP2016206459(A) 申请公布日期 2016.12.08
申请号 JP20150088670 申请日期 2015.04.23
申请人 JSR CORP 发明人 NAMAI HAYATO
分类号 G03F7/038;C08F20/36;G03F7/039;G03F7/20 主分类号 G03F7/038
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