METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor is provided to decrease the height of an equivalent oxide layer of the capacitor, by using a TaON thin film which has a higher dielectric constant than conventional NO and better leakage current characteristic and breakdown voltage characteristic than a Ta2O5 layer. CONSTITUTION: An interlayer dielectric(11) and a nitride layer(12) are sequentially deposited on a semiconductor substrate(10). The first photoresist layer pattern is formed in a capacitor formation region, and the nitride layer and the interlayer dielectric are sequentially etched to form a contact hole. A plug polysilicon layer(13) is deposited in the contact hole. A cap oxide layer(14) and a hard mask layer are sequentially deposited. The second photoresist layer pattern is formed. The hard mask layer and the cap oxide layer are sequentially etched to expose the plug polysilicon layer so that a lower electrode module is formed. After a polysilicon layer as a lower electrode material is deposited, photoresist is coated on the polysilicon layer to fill the inside of the lower electrode module. The hard mask layer and the polysilicon layer for the lower electrode deposited on the cap oxide layer are polished to become each independent cell for memory storage. The photoresist is removed. An amorphous TaON thin film is formed on the polysilicon layer for the lower electrode. The TaON thin film is annealed and crystallized, and a metal layer(20) for an upper electrode is deposited to form a capacitor of a concave structure.