| 摘要 |
PURPOSE: To enable preventing reduction of storage capacity being more effective by an accidental write-in error in a non-volatile semiconductor storage device being electrically writable and erasable like a flash memory. CONSTITUTION: A status register (32) in a non-volatile semiconductor storage chip is provided with a bit (B7) indicating whether access from the outside of a chip can be performed or not, a bit (B4) indicating whether write-in is finished normally or not, and a bit (B6) whether normal write-in can be performed by performing write-in again or not.
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