METHOD FOR EVALUATING QUALITY OF COMPOUND SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a nondestructive evaluation method of a compound semiconductor wafer requiring no slicing of a sample other than a product sample in which dislocation density of a high level wafer having a mean dislocation density of 100/cm2 or less can be evaluated correctly without requiring a troublesome etching operation. SOLUTION: A compound semiconductor wafer 1 to be evaluated is irradiated with laser light and the parts A-F where the peak intensity of photoluminescent light radiated from the wafer 1 is high are regarded as the parts of high dislocation density.