| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having an address decoder constructed by using a highly reliable N channel MOS transistor. SOLUTION: A row address decoder 50A is provided with a NAND 501, the M channel MOS transistor 502, P channel MOS transistors 503 and 504 and inverters 505 to 507. In the case of a pre-decode signal XQ<0>=1, XR<0>=0 and a decode activation signal XP<0>=1, the NAND 501 outputs an H level signal to a node N1. Because the N channel MOS transistor 502 is turned on, the inverter 505 outputs an L level signal, the inverter 506 output voltage VPP to a main word line 1 and the inverter 507 outputs voltage VDD to a main word line 2.
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