发明名称 |
Systems and Methods for Bidirectional Device Fabrication |
摘要 |
Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations. |
申请公布号 |
US2016351399(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201615164358 |
申请日期 |
2016.05.25 |
申请人 |
Ideal Power Inc. |
发明人 |
Blanchard Richard A.;Alexander William C. |
分类号 |
H01L21/265;H01L21/283;H01L21/306;H01L21/324;H01L21/683;H01L29/739;H01L29/66;H01L21/18;H01L21/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Austin TX US |