| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam proximity exposure system which can make high-accuracy alignment and causes few uneven exposure. SOLUTION: This electron beam proximity exposure system is provided with an electron beam source 14, an electron beam shaping means 18, a mask 30 having an opening positioned on the route of the electron beam emitted from the source 14, and a stage 44 which moves while holding a sample 40. The mask 30 is arranged closely to the surface of the sample 40 and a pattern is exposed to the electron beam passed through the opening of the mask 30. The exposure system is also provided with a standard mark 60 provided on the stage 44, mark detectors 38, 64, and 66 which detect sample aligning marks provided on the surface of the sample 40 and the standard mark 60, and an exposure position control means which controls the exposure system to expose the pattern to a prescribed position of the sample 40 by calculating the positional relations between mask aligning marks and the sample aligning marks from the positional relations between the mask aligning marks and standard mark 60 and between the sample aligning marks and standard mark 60.
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