发明名称 A process for nitriding an aluminum-containing substrate
摘要 <p>While a nitride film is formed on a substrate containing metallic aluminum, a fluctuation in forming nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of 10&lt;-3&gt; torr or less, and subsequently it is subjected to a heating/nitriding treatment in an atmosphere containing at least nitrogen to form a nitride film. A porous body through which a nitrogen atoms-containing gas can flow is clarified by heating at a temperature of 1000 DEG C or more under a pressure of 10&lt;-4&gt; torr or less, and then the porous body is contacted the atmosphere during the heating/nitriding step.</p>
申请公布号 EP1179609(A1) 申请公布日期 2002.02.13
申请号 EP20010306503 申请日期 2001.07.30
申请人 NGK INSULATORS, LTD. 发明人 WATANABE, MORIMICHI;KAWASAKI, SHINJI;ISHIKAWA, TAKAHIRO
分类号 C23C8/02;C23C8/24;(IPC1-7):C23C8/24 主分类号 C23C8/02
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