发明名称 |
A process for nitriding an aluminum-containing substrate |
摘要 |
<p>While a nitride film is formed on a substrate containing metallic aluminum, a fluctuation in forming nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of 10<-3> torr or less, and subsequently it is subjected to a heating/nitriding treatment in an atmosphere containing at least nitrogen to form a nitride film. A porous body through which a nitrogen atoms-containing gas can flow is clarified by heating at a temperature of 1000 DEG C or more under a pressure of 10<-4> torr or less, and then the porous body is contacted the atmosphere during the heating/nitriding step.</p> |
申请公布号 |
EP1179609(A1) |
申请公布日期 |
2002.02.13 |
申请号 |
EP20010306503 |
申请日期 |
2001.07.30 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
WATANABE, MORIMICHI;KAWASAKI, SHINJI;ISHIKAWA, TAKAHIRO |
分类号 |
C23C8/02;C23C8/24;(IPC1-7):C23C8/24 |
主分类号 |
C23C8/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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