发明名称 |
Method of manufacturing a semiconductor memory device incorporating a capacitor therein |
摘要 |
A method for manufacturing a ferroelectric random access memory (FeRAM) device which includes the steps of preparing an active matrix provided with a transistor, diffusion regions, an isolation region, a bit line, a first insulating layer and a second insulating layer; forming a first conductive layer and then a dielectric layer on the active matrix; carrying out a rapid thermal annealing (RTA) for producing nuclei in the dielectric layer; forming a second conductive on top of the dielectric layer; carrying out a thermal annealing in a furnace; forming a capacitor structure provided with a top electrode, a capacitor thin film and a bottom electrode by patterning the second conductive, the dielectric and the first conductive layers into a first predetermined configuration; carrying out a first recovery; forming a third insulating layer on the capacitor structure and the second insulating layer; patterning the third insulating layer to form a first opening and a second opening; and carrying out a second recovery.
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申请公布号 |
US6352898(B2) |
申请公布日期 |
2002.03.05 |
申请号 |
US20000746928 |
申请日期 |
2000.12.26 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
YANG WOO-SEOK;PYUN DEUK-SOO |
分类号 |
H01L27/105;H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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