发明名称 |
Method for forming a ferroelectric domain-inverted structure |
摘要 |
A method for forming a ferroelectric domain-inverted structure, having the steps of joining at least two kinds of ferroelectric material which have different spontaneous polarizations, and ferroelectric domain-inverting one of the ferroelectric materials and thereby ferroelectric domain-inverting the other ferroelectric material joined thereto.
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申请公布号 |
US6353495(B1) |
申请公布日期 |
2002.03.05 |
申请号 |
US19990375082 |
申请日期 |
1999.08.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NGK INSULATORS, LTD. |
发明人 |
MIZUUCHI KIMINORI;YAMAMOTO KAZUHISA;KAWAGUCHI TATSUO;IMAEDA MINORU |
分类号 |
G02B6/12;G02F1/35;G02F1/355;G02F1/37;G02F1/377;(IPC1-7):G02F1/355;G02F1/365 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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