发明名称 Method for forming a ferroelectric domain-inverted structure
摘要 A method for forming a ferroelectric domain-inverted structure, having the steps of joining at least two kinds of ferroelectric material which have different spontaneous polarizations, and ferroelectric domain-inverting one of the ferroelectric materials and thereby ferroelectric domain-inverting the other ferroelectric material joined thereto.
申请公布号 US6353495(B1) 申请公布日期 2002.03.05
申请号 US19990375082 申请日期 1999.08.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NGK INSULATORS, LTD. 发明人 MIZUUCHI KIMINORI;YAMAMOTO KAZUHISA;KAWAGUCHI TATSUO;IMAEDA MINORU
分类号 G02B6/12;G02F1/35;G02F1/355;G02F1/37;G02F1/377;(IPC1-7):G02F1/355;G02F1/365 主分类号 G02B6/12
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