发明名称 |
Method of forming inter-metal interconnection |
摘要 |
A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.
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申请公布号 |
US6352918(B1) |
申请公布日期 |
2002.03.05 |
申请号 |
US19980199877 |
申请日期 |
1998.11.24 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG YIMIN;LIU CHIH-CHIEN;YEW TRI-RUNG |
分类号 |
H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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