发明名称 Method of forming inter-metal interconnection
摘要 A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.
申请公布号 US6352918(B1) 申请公布日期 2002.03.05
申请号 US19980199877 申请日期 1998.11.24
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG YIMIN;LIU CHIH-CHIEN;YEW TRI-RUNG
分类号 H01L21/768;(IPC1-7):H01L21/311 主分类号 H01L21/768
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