METHOD FOR FABRICATING RELIABLE HIGH-INTEGRATED FERROELECTRIC CAPACITOR

摘要

PURPOSE: A method for fabricating a reliable high-integrated ferroelectric capacitor is provided to prevent a characteristic of a ferroelectric material layer from being deteriorated, by making a reaction barrier layer and a conductive pad completely surround the capacitor. CONSTITUTION: A contact plug(118) penetrates a predetermined portion of an insulation layer formed on a semiconductor substrate(100) having an active region, in contact with the active region. The ferroelectric capacitor is formed on the contact plug and on the insulation layer formed at both sides of the contact plug. The reaction barrier layer(132) is formed on the insulation layer and the capacitor. The reaction barrier layer is patterned to expose a part of an upper electrode. A conductive hydrogen barrier layer is formed on the reaction barrier layer and the exposed upper electrode. The reaction barrier layer and the conductive hydrogen barrier layer are patterned to surround at least the capacitor so that a hydrogen barrier layer conductive pad(136) in contact with the upper electrode is formed.