| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to increase an area of a dielectric layer in contact with a storage electrode, by forming a storage electrode pad in contact with a semiconductor substrate and by simultaneously removing a sacrificial layer and an interlayer dielectric on an etch stop layer after the storage electrode is formed. CONSTITUTION: The first interlayer dielectric(106), the etch stop layer(108) and the second interlayer dielectric are sequentially formed on a semiconductor substrate(100). The first interlayer dielectric, the etch stop layer and the second interlayer dielectric are etched to form an opening exposing a predetermined portion of the semiconductor substrate. A conductive material is filled in the opening to form the storage electrode pad(114). The sacrificial layer having an opening which exposes a part of a storage lower electrode and the second interlayer dielectric, is formed on the semiconductor substrate having the storage lower electrode. The storage electrode(119) is formed on the inner wall having the sacrificial layer. The sacrificial layer and the second interlayer dielectric are etched until the etch stop layer is exposed. The dielectric layer(120) and a plate electrode(122) are sequentially formed on the resultant structure from which the sacrificial layer and the second interlayer dielectric are eliminated.
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