| 摘要 |
PURPOSE: A semiconductor device having a gallium nitride crystal passivation layer is provided to intercept a leakage current flowing from the surface of a device to an interface, by forming InxGa1-xN at the edge of the upper surface of a p-GaN layer during a crystal growth process. CONSTITUTION: A GaN semiconductor device has a p-n junction diode structure. An InxGa1-xN(x is not less than 0 and less than 1) crystal layer of predetermined thickness and width is formed as a passivation layer in the periphery of the upper portion of the p-GaN layer(44) which is an uppermost layer of the semiconductor device.
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