发明名称 |
METHOD FOR INSPECTING DEFECT OF SILICON-ON-INSULATOR WAFER USING SCANNING ACOUSTIC MICROSCOPE |
摘要 |
PURPOSE: A method for inspecting a defect of a silicon-on-insulator(SOI) wafer using a scanning acoustic microscope is provided to more precisely measure distribution, density and size of a defect on an entire wafer, by observing the defect regarding the entire surface of the wafer. CONSTITUTION: The SOI wafer is polished and a cleaning process is performed regarding the SOI wafer. An HF defect region of the SOI wafer is selectively etched. A Secco defect region of the SOI wafer is selectively etched. The SOI wafer is observed by using the scanning acoustic microscope to observe a junction defect, an HF defect and a Secco defect on the entire surface of the SOI wafer.
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申请公布号 |
KR20020018718(A) |
申请公布日期 |
2002.03.09 |
申请号 |
KR20000051970 |
申请日期 |
2000.09.04 |
申请人 |
SILTRON INC. |
发明人 |
HONG, JIN GYUN;JUNG, SU CHEON;MUN, DO MIN |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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