| 摘要 |
PROBLEM TO BE SOLVED: To reduce the complexity of a circuit, the area of die, and an undesirable parasitic capacity while providing the same function as conventional CMOS transmission or pass gate, by a redundant multiplexer circuit technology having good area efficiency of improved integrated circuit. SOLUTION: Purpose of this invention is realized by utilizing an on-chip boosted voltage level which is utilized generally in an integrated circuit storage device supplying voltage to a control signal given to a single N channel transistor pass gate, instead of conventional power source voltage level Vcc. Vpp voltage and circuit ground (GND) are utilized as signal levels of logic 'High' and 'Low' respectively, since these control signals operates at a DC level after start of the device, the utilization can be performed. Also, throughput speed in an address path and a data path is increased by reducing undesirable parasitic capacity largely.
|
