| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique through which refresh operations suitable to a plurality of respective operating states a semiconductor memory can take are performed. SOLUTION: In an operation cycle, a memory chip 200 starts a refresh operation in synchronism with an ATD signal that indicate a change in an address after the generation of a refresh timing signal RFTM. Moreover, in a snooze state (a low power consumption state), a refresh operation is started in accordance with the generation of the signal RFTM regardless of the presence or absence of the ATD signal.
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