| 摘要 |
PURPOSE: A hetero bipolar transistor is provided to have characteristics such as high current amplification factor or the like by suppressing the recombination current of the emitter and base while lowering the drive voltage utilizing an SiGeC layer. CONSTITUTION: An Si-collector buried layer(11), the first base region(12) mode of the SiGeC layer having a high C content, the second base region(13) made of the SiGeC layer or an SiGe layer having a low C content, and an Si-cap layer(14) having an emitter region(14a), are laminated on an Si substrate(10). The C content of at least an emitter region side end of the region(13) is less than 0.8%. Thus, in a depletion layer of an emitter-base junction, formation of the recombination center of the C is suppressed. An improvement in electrical characteristic such as a current amplification factor or the like due to a reduction in the recombination current is realized while maintaining low voltage drive properties.
|
