| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer diffusion device and a method of manufacturing a semiconductor device, with which entrainment of the atmosphere into a diffusion furnace can be prevented, when a semiconductor wafer is inserted into the furnace. SOLUTION: The semiconductor wafer diffusion device is equipped with a diffusion furnace 1 for performing diffusion treatment or oxidation treatment of a semiconductor wafer, a first gas inlet port 3 provided at an end of the diffusion furnace for introducing a first inert gas into the diffusion furnace, an insertion port provided at the other end of the diffusion furnace for inserting a board 7 on which a plurality of semiconductor wafers 5 are arranged and placed, a shutter for opening/closing this insertion port, a heater 9 disposed around the diffusion furnace, a second gas inlet 4 provided on a side surface on the other end side of the diffusion furnace for introducing a second inert gas into the diffusion furnace, and a gas discharge port 6 provided on a side surface on the other end side of the diffusion furnace and opposed to the second gas inlet port.
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