| 摘要 |
PROBLEM TO BE SOLVED: To provide an HEMT device that has a relaxed layer showing high gain and frequency response, as compared with the conventional HEMT device. SOLUTION: The relaxation layer is arranged on a substrate, a partially- relaxed channel is arranged on a buffer layer, a barrier layer is arranged on each channel, a cap layer is arranged on the barrier layer, a gate is mounted on the barrier layer, and a source and a drain are mounted at a position selected in advance on the cap layer, so that the HEMT device having the gate, source, and drain is manufactured. The HEMT device shows higher gain and frequency responsiveness than a HEMT device 10 of prior art.
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