| 摘要 |
In the method for manufacturing a semiconductor device according to the present invention, after forming a BPSG film 110 on a silicon substrate 100, a preparatory hole 120 that reaches a specific depth and has a larger diameter than a contact hole 118 is formed at a position where the contact hole 118 (see FIG. 4) is to be formed at the BPSG film 110. Thus, polysilicon side walls 114 (see FIG. 4) formed at side portions of a polysilicon film 112 (see FIG. 4) are also formed at the side walls of the preparatory hole 120. As a result, the contact hole 118 (see FIG. 4) free of shape defects can be formed by using an etching mask 116 (see FIG. 4) constituted of the polysilicon film 112 and the polysilicon side walls 114. This structure prevents defects related to the shape of the hole and reduces electrical defects such as shorting.
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