发明名称 |
METHOD OF FORMING CONDUCTION PATH AND SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To form a conduction path on an insulating substrate efficiently without employing etching, which requires wastewater treatment equipment. SOLUTION: A mask member 2 having an opening 21 in a conduction path pattern is allowed to adhere to a surface of an insulating substrate 1. After a conductive layer 3 is formed in the opening 21 by vapor deposition or sputtering, the mask member 2 is removed from the insulating substrate 1 to form a conduction path 4.
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申请公布号 |
JP2002111176(A) |
申请公布日期 |
2002.04.12 |
申请号 |
JP20000292381 |
申请日期 |
2000.09.26 |
申请人 |
ROHM CO LTD |
发明人 |
ISOKAWA SHINJI;YAMAGUCHI TOMOMI |
分类号 |
C23C14/04;C23C14/14;H01L21/3205;H01L23/52;H05K3/14;H05K3/16;(IPC1-7):H05K3/14;H01L21/320 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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