发明名称 METHOD OF FORMING CONDUCTION PATH AND SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To form a conduction path on an insulating substrate efficiently without employing etching, which requires wastewater treatment equipment. SOLUTION: A mask member 2 having an opening 21 in a conduction path pattern is allowed to adhere to a surface of an insulating substrate 1. After a conductive layer 3 is formed in the opening 21 by vapor deposition or sputtering, the mask member 2 is removed from the insulating substrate 1 to form a conduction path 4.
申请公布号 JP2002111176(A) 申请公布日期 2002.04.12
申请号 JP20000292381 申请日期 2000.09.26
申请人 ROHM CO LTD 发明人 ISOKAWA SHINJI;YAMAGUCHI TOMOMI
分类号 C23C14/04;C23C14/14;H01L21/3205;H01L23/52;H05K3/14;H05K3/16;(IPC1-7):H05K3/14;H01L21/320 主分类号 C23C14/04
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