发明名称 METHOD FOR PRODUCING THERMOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To simplify the process of a method for producing a small and high density thermoelectric conversion element. SOLUTION: P-type semiconductor plates 51 and n-type semiconductor plates 52 and laid alternately in layers to produce a first multilayer material which is then cut planarly in the direction perpendicular to the laying direction to produce a semiconductor multilayer plate 54. Two or more semiconductor multilayer plates 54 are laid in layer such that the p-type semiconductor of one semiconductor multilayer plate 54 overlaps the n-type semiconductors of two adjacent semiconductor multilayer plates 54 to produce a second multilayer material which is then cut in the direction perpendicular to the laying direction thus producing a semiconductor multilayer plate 55 serving as thermoelectric conversion element. Alternatively, a p-type semiconductor plate 51, an n-type semiconductor plate 52 and a semiconductor multilayer plate 55 having a substantially identical thickness are employed.
申请公布号 JP2002111082(A) 申请公布日期 2002.04.12
申请号 JP20000292911 申请日期 2000.09.26
申请人 FUJIKURA LTD 发明人 OKADA KENICHI;TANABE NOBUO
分类号 H01L35/34;H01L35/08;H01L35/16;H01L35/32;(IPC1-7):H01L35/34 主分类号 H01L35/34
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