发明名称 |
METHOD FOR PRODUCING THERMOELECTRIC CONVERSION ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To simplify the process of a method for producing a small and high density thermoelectric conversion element. SOLUTION: P-type semiconductor plates 51 and n-type semiconductor plates 52 and laid alternately in layers to produce a first multilayer material which is then cut planarly in the direction perpendicular to the laying direction to produce a semiconductor multilayer plate 54. Two or more semiconductor multilayer plates 54 are laid in layer such that the p-type semiconductor of one semiconductor multilayer plate 54 overlaps the n-type semiconductors of two adjacent semiconductor multilayer plates 54 to produce a second multilayer material which is then cut in the direction perpendicular to the laying direction thus producing a semiconductor multilayer plate 55 serving as thermoelectric conversion element. Alternatively, a p-type semiconductor plate 51, an n-type semiconductor plate 52 and a semiconductor multilayer plate 55 having a substantially identical thickness are employed.
|
申请公布号 |
JP2002111082(A) |
申请公布日期 |
2002.04.12 |
申请号 |
JP20000292911 |
申请日期 |
2000.09.26 |
申请人 |
FUJIKURA LTD |
发明人 |
OKADA KENICHI;TANABE NOBUO |
分类号 |
H01L35/34;H01L35/08;H01L35/16;H01L35/32;(IPC1-7):H01L35/34 |
主分类号 |
H01L35/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|