| 摘要 |
PROBLEM TO BE SOLVED: To reduce HF-defect density of an SOI. SOLUTION: An SOI whose thickness is at most 200 nm is thermally treated in an inert atmosphere at a temperature which is at least the eutectic crystal temperature (e.g., 966 deg.C) of a semiconductor metal compound (e.g., nickel silicide), which is composed of semiconductor material constituting the crystal semiconductor of the SOI and metal and at most the melting point of the semiconductor material.
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