| 摘要 |
PROBLEM TO BE SOLVED: To control properly the temperature of the heat treatment of a wafer by measuring its actual temperature. SOLUTION: In a batch-mode vertical hot-wall-style heat treatment apparatus 10, an L-shaped radiation thermometer 50 having a holding pipe 52 and having a waveguide bar 56 with a total reflection surface 57 is so inserted into a cap 20 for sealing a process tube 11 as to be connected with a controller 33 for feedback-controlling heaters 32 based on the temperatures measured by the radiation thermometer 50. After inserting the waveguide bar 56 into the space between wafers 1, 1 held on a boat 21, the waveguide bar 56 is so rotated by the holding pipe 52 as to make measurable by the total reflection surface 57 the temperatures of the central and peripheral portions of the wafer 1. As a result, by measuring with the radiation thermometer the present and actual temperature of the central portion of the wafer and by feedback-controlling the heaters, the temperature differences between the central and peripheral portions of the wafer which are generated during its heat treatment and during its temperature-rise and temperature-fall can be eliminated to make improvable the uniformity of the distribution of processing states in its surface.
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