| 摘要 |
PURPOSE: A complementary-metal-oxide-semiconductor(CMOS) image sensor is provided to minimize the area necessary for an isolation region by forming an isolation layer while using a channel ion implantation process, and to improve a characteristic of the image sensor by exhausting excess charges while using a lateral over flow drain(LOFD) structure. CONSTITUTION: A photodiode(36) converts an image signal regarding light into an electrical image signal. An LOFD transistor(38) laterally exhausts the excess charges generated from the photodiode, wherein one electrode of the LOFD transistor is connected to the photodiode. A transfer signal(TX) is applied to the gate of a transfer transistor(35), wherein one electrode of the transfer transistor is connected to the photodiode and the other electrode of the transfer transistor is connected to a floating node(32). A reset signal(RX) is applied to the gate of a reset transistor(31), wherein one electrode is connected to the floating node and the other electrode of the reset transistor is connected to a reset drain region, so that the charges of the floating node are reset after signal charges are read.
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