Method of forming contact structure in a semiconductor device

摘要

A method of forming a contact structure in a semiconductor device is provided. In this method, a semiconductor layer, an ohmic metal layer, and a barrier metal layer are formed on the surface of a semiconductor substrate on which a metal contact hole has been formed. A compound material layer having a uniform thickness is formed on the bottom, sidewalls and lower corners of the contact hole by thermally reacting the semiconductor layer with the ohmic metal layer. Accordingly, when the contact hole exposes an impurity layer and portions of an isolation layer adjacent to the impurity layer, the junction leakage current characteristics of the impurity layer and a contact resistance are improved.