3-5 group compound semiconductor and light-emitting element

摘要

Provided is a 3-5 group compound semiconductor comprising a GaAs substrate, a buffer layer on said GaAs substrate and an epitaxial crystal layer on said buffer layer, and the dislocation density in the epitaxial crystal layer on said buffer layer is 2000/cm<2> or less. The properties and reliability of an electronic device or optical device can be remarkably improved. <IMAGE>