发明名称 |
METHOD FOR PRODUCING A DMOS TRANSISTOR |
摘要 |
The invention relates to a method for producing a DMOS transistor structure. The invention is advantageous in that a protective layer (14) is used to protect the already essentially completed DMOS transistor structure from the negative effects of additional process steps. According to the invention, the DMOS gate electrode is not customarily structured, as in the prior art, by using a single lithography step, rather the structuring of the DMOS gate electrode is split between two lithography steps. In a first lithography step, essentially only the source region (9) of the DMOS transistor structure is opened, whereby the electrode layer still present can be used as a mask for the subsequent production of the body region (8). |
申请公布号 |
WO0235600(A2) |
申请公布日期 |
2002.05.02 |
申请号 |
WO2001EP12035 |
申请日期 |
2001.10.17 |
申请人 |
INFINEON TECHNOLOGIES AG;MUELLER, KARLHEINZ;WAGNER, CAJETAN;ROESCHLAU, KLAUS |
发明人 |
MUELLER, KARLHEINZ;WAGNER, CAJETAN;ROESCHLAU, KLAUS |
分类号 |
H01L29/78;H01L21/336;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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