| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection method for temperature characteristics of semiconductor device for power source capable of easily and properly conducting product inspection. SOLUTION: The power source IC1 is constituted of a high accuracy power source circuit 2, a memory element 3 and other function circuit 4. For inspecting the temperature characteristics of the power source IC1, the output voltage from the power source IC1 at the maximum temperature (110 deg.C) of the measuring temperature range (-40 deg.C to 110 deg.C) is stored in a memory means. When the output voltage of the power source IC1 at a reference room temperature (25 deg.C) is measured, fluctuation range of output voltage in the measurement temperature range is predicted based on the voltage difference between the output voltage and the output voltage stored in the memory element 3 and between the maximum temperature and the reference room temperature. If the fluctuation range and the output voltage of the reference room temperature fulfill a temperature specification, the power source IC1 judges to be a good product.
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