| 摘要 |
PURPOSE: A metal electrode lines formation method of semiconductor devices is provided to prevent a dishing by using a polishing stopper. CONSTITUTION: An interlayer dielectric(12) is formed on a substrate(11). By selectively etching the interlayer dielectric, a first trench region(15) for a plurality of metallization patterns having a narrow-width and a second trench region(16) for a wide-width metallization pattern are formed. After forming a metal barrier(13) on the resultant structure, a metal wire(14) and a polishing stopper are sequentially formed on the metal barrier(13). The metal wire(14) is then filled into the first and second trenches(15,16) by polishing the metal wire using the polishing stopper.
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